“Our collaboration on this important, new platform demonstrates the ADI/TSMC commitment to specialty technology development, and the great number of applications these improved products will enable.”Interested in the latest news and articles about ADI products, design tools, training and events?
Nov eMemory’s NeoFuse IP Verified in TSMC 10nm FinFET Process Aug eMemory Unveils EcoBit Technology for RFID and NFC Applications Jul eMemory Announces Comprehensive NVM Solution in 0.13um BCD Process for PMIC Applications For Medium you have a choice of N (VTM_N) or P (VTM_P) or both. There are no exceptions for pads, logos, or anything else. “The combination of an optimized process along with circuit and architecture innovation is key for our high-performance converter and linear products. Highlights. Zero threshold voltage is also called depletion threshold voltage. MiM (Cap_Top_Metal, also known as Metal 4 Prime, to Metal 4) provides a capacitance of 1 fF/µm². ... TSMC 250BCD, TSMC 180 BCD2, GLOBALFOUNDRIES 130BCDLite and GLOBALFOUNDRIES 180BCDLite_IC. voltage of 3.3V (typical case) in the TSMC 0.18um 1.8V/3.3V 0.18um process. TSMC’s 0.18-micron, BCD process supports a range of operating voltages and provides cost-effective operation with a minimal footprint and a high degree of energy efficiency. It lends itself to many computer, industrial and consumer applications.The cookies we use can be categorized as follows:Recently introduced ADI products developed with the new platform include isolated CAN (control-area network) transceivers; a HART (Highway Addressable Remote Transducer) modem IC; an ECG (electrocardiogram) AFE (analog front-end); a series of digital potentiometers, and an audio codec.“ADI has worked with TSMC since the 0.6-micron and 0.35-micron analog processes,” said Rick Cassidy, president, TSMC North America. TSMC Design Rules, Process Specifications, and SPICE Parameters. Choose from one of our 12 newsletters that match your product area of interest, delivered monthly or quarterly to your inbox.The new process technology platform significantly improves analog performance for a number of devices, including A/D and D/A converters, power management devices, and audio coders/decoders that are widely used in consumer, communication, computer, industrial, and automotive applications. For Zero you have a choice of N (VTD_N) or P (VTD_P) or both AND you must order Medium of the same type.Note: Stacked contacts/vias are supported by this process.CR025 (CM025) (mixed-mode) offers the above layers of CL025 plus deep n-well, ThickTopMetal (inductor), and MiM options. Performance enhancements achieved with the 0.18 micron, 5-volt process include an order of magnitude noise improvement, a 70 percent lower standby leakage current, a 50 percent improvement in linearity and a 50 percent better capacitor and resistor matching.“The close, long-term technology relationship between Analog Devices and TSMC has enabled the development of this new industry-leading analog technology platform,” said David Robertson, vice president, Analog Technology, Analog Devices. Medium and Zero are extra cost options. Hsinchu, Taiwan (March 16, 2020) –eMemory, the world’s leading provider of intellectual property for non-volatile memory, today announced that its NeoMTP has been qualified on TSMC’s Third-Generation 0.18μm Bipolar-CMOS-DMOS (BCD) process to provide IoT power-management solutions and cost competitiveness. Events > News > Products & Services > Fab Processes > TSMC > TSMC 0.25 Micron ProcessTaiwan Semiconductor (TSMC) 0.25 MicronOn this process, TSMC requires that all features on the insulator layers (CONTACT, VIA, VIA2, VIA3, VIA4) be of the single standard size. Large openings are to be replaced by an array of standard sized openings.Important note about insulator layersThese processes support the following design rulesThe CR025 (CM025) process offers three threshold voltages: nominal, medium and Zero.