Because RF-SOI can bring better linearity and insertion loss at the best cost/performance trade-off, it enables higher data speeds, longer battery life and fewer dropped calls.
RF Technologies Performance, integration and area-optimized platforms for next-generation connectivity We live in a connected world. ST’s RF-SOI technology is a specialized process, optimized to perfectly meet the demanding analog RF performance and integration requirements of RF Front-End Modules for 4G, 5G, 2.4-5 GHz RF connectivity and Narrowband IoT devices, also known as LTE Cat NB1. AVX Corp., Broadcom Inc., Murata Manufacturing Co. Ltd., Qorvo Inc., Qualcomm Technologies Inc., Skyworks Solutions ( News - Alert ) Inc., STMicroelectronics NV, Tai-Saw Technology Co. Ltd., Taiyo Yuden Co. Ltd., and TDK Corp. are some of the major market participants. Quick-Links . There are several dynamics at play with RF SOI. A couple of years ago, SOI leader Soitec, in partnership with UCL, brought breakthrough RF-SOI wafer technology to the market (read about that here). RF SOI is a specialized process used to make select RF chips, such as switch devices and antenna tuners, for smartphones and other products. Alle Kategorien; Neueste Diskussionen; Unbeantwortet ; Beste Inhalte; Kategorien. The technology offering, with three generations in high volume manufacturing, is further enhanced by silicon proven accurate models and design libraries, and world-class design enablement.These processes are well-suited for products requiring isolation such as cellular switches. The technology offering, with three generations in high volume manufacturing, is further enhanced by silicon proven accurate models and design libraries, and world-class design enablement. No, it’s not. Scheinbar bist du neu hier. The growing popularity of RF SOI will offer immense growth opportunities.
of smartphones based on Soitec RF-SOI technology. What are the top players in the market? Santa Clara, Calif., February 20, 2019 – GLOBALFOUNDRIES today announced that the company’s mobile-optimized 8SW RF SOI technology platform has delivered more than a billion dollars of client design win revenue since its launch in September 2017. RF SOI is a specialized process used to make select RF chips, such as switch devices and antenna tuners, for smartphones and other products. As an RF industry leader, GLOBALFOUNDRIES is working with forward-thinking companies to enable new levels of connectivity—and an era of connected intelligence—with a portfolio of established and advanced RF SOI platforms targeting low noise amplifiers, RF switches, phased-array antennas and control function integration in RF front-end modules for advanced 4G LTE, mmWave beamforming and sub 6 GHz 5G … Testberichte, Kaufberatung und Hilfe zum Thema Maus, Tastatur, Webcam und weiteren Peripheriegeräten. The XR013 is X-FAB’s 0.13 µm modular and feature-rich RF-SOI technology solution suitable for multiple air-interface standards and both fixed and mobile applications. There are several dynamics at play with RF SOI. As an RF industry leader, GLOBALFOUNDRIES is working with forward-thinking companies to enable new levels of connectivity—and an era of connected intelligence—with a portfolio of established and advanced RF SOI platforms targeting low noise amplifiers, RF switches, phased-array antennas and control function integration in RF front-end modules for advanced 4G LTE, mmWave beamforming and sub 6 GHz 5G applications.Advanced & mainstream technologies for automotive radar, IoT and RF/mmWave wireless connectivity such as LTE/5G and Wi-Fi/WiGigPerformance-tuned platforms for automotive LiDAR/RADAR & wireless/wired/optical communicationsCost-effective, integration-optimized platforms for Wi-Fi & cellular power amplifiers, displacing GaAs technologies
SAN DIEGO – July 6, 2015 – Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, announces the UltraCMOS® 11 platform, the industry’s first RF SOI technology built on GLOBALFOUNDRIES’ 130 nm 300 mm RF technology platform. RF SOI is the RF version of silicon-on-insulator (SOI) technology, which is different than fully-depleted SOI (FD-SOI) for digital chips.
The RF SOI technologies have been improved to follow the evolving system requirements for insertion loss, isolation, voltage tolerance, linearity, integration and cost. Low noise amplifiers can also be integrated with optimized low-noise, high-gain devices and low-loss inductors realized with thick Cu or Al layers.Substrate options include “thin-film” for the best Ron-Coff performance and “thick-film” for bulk-like behavior of the active MOSFETs, free of floating body effects.In addition to the active devices, process options include silicided and unsilicided poly resistors, RF metal-insulator-metal (MIM) capacitors, metal-fringe capacitors (MFCs), scalable geometry inductors, fixed geometry inductors, fixed geometry baluns, and transformers.
RF IC based on Soitec RF-SOI wafers.
WOW: Mit RF-Funk-Technologie!!!! Hallo, Fremder!